c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf p p p p 18n50 18n50 18n50 18n50 rev.a jun .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 18a,500v,r ds(on) (max0.27 ? )@v gs =10v ? ultra-low gate charge(typical 42nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advancedplanar stripe,vdmos technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially wellsuited for ac-dc switching power supplies, dc-dc powerconverters high voltage h-bridge motor drive pwm absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 18 a continuous drain current(@tc=100 ) 12.7 a i dm drain current pulsed (note1) 80 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 330 mj e ar repetitive avalanche energy (note1) 27.7 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 208 w derating factor above 25 1.67 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.6 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62.5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 18n50 18n50 18n50 18n50 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 25 v,v ds =0v - - 10 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 10 0 a drain -source breakdown voltage v (br)dss i d = 10 m a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds =10v,i d = 1m a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 9 a - 0.235 0.27 ? forward transconductance gfs v ds = 40 v,i d = 9 a - 16 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2530 3290 pf reverse transfer capacitance c rss - 11 14.3 output capacitance c oss - 300 390 switching time rise time tr v dd = 250 v, i d = 18 a r g = 25 ? (note4,5) - 40 90 ns turn-on time ton - 150 310 fall time tf - 95 200 turn-off time toff - 110 230 total gate charge(gate-source plus gate-drain) qg v dd = 400 v, v gs =10v, i d = 18 a (note 4 ,5) - 42 55 nc gate-source charge qgs - 12 - gate-drain("miller") charge qgd - 14 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 18 a pulse drain reverse current i drp - - - 72 a forward voltage(diode) v dsf i dr = 18 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 18 a,v gs =0v, di dr / dt =100 a / s - 500 - ns reverse recovery charge qrr - 5.4 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 5.2 mh i as = 18 a,v dd = 50 v,r g = 25 ? ,starting t j =25 3.i sd 18 a,di/dt 200a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 18n50 18n50 18n50 18n50 3 / 7 fig.1 on state characteristics fig.2 transfer current characteristics fig.3 on-resistance variation vs drain current fig.4 body diode forward voltage variation with source currentand temperature fig.5 capacitance characteristics fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 18n50 18n50 18n50 18n50 4 / 7 fig.11 transient thermal response curve fig.7 breakdown voltage variation fig.8 on-resistance variation vs.temperature fig.9 maximum safe operation area fig.10 maximum drain current vs case temperature
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 18n50 18n50 18n50 18n50 5 / 7 fig.12 gate test circuit & waveform fig.13 resistive switching test circuit & waveform fig.14 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 18n50 18n50 18n50 18n50 6 / 7 fig.15 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 18n50 18n50 18n50 18n50 7 / 7 to- to- to- to- 220 220 220 220 package package package package dimension dimension dimension dimension unit:mm
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